DocumentCode
3572332
Title
Nanotechnologies in semiconductor electronics
Author
Pchelyakov, O.P. ; Toropov, A.I. ; Popov, V.P. ; Latyshev, A.V. ; Litvin, L.V. ; Nastaushev, Yu.V. ; Scheglov, D.V. ; Aseev, A.L.
Author_Institution
Inst. of Semicond. Phys., Novosibirsk, Russia
Volume
3
fYear
2003
Firstpage
9
Abstract
The various technologies for fabrication micro- and nanosized systems included semiconductor, metal and insulator structures are reviewed on the base of the data obtained in Novosibirsk Institute of Semiconductor Physics. Main attention is devoted to development of method of molecular beam epitaxy, silicon-on-insulator fabrication process, electron beam lithography and scanning probe nanolithography.
Keywords
electron beam lithography; molecular beam epitaxial growth; nanoelectronics; nanolithography; reviews; semiconductor growth; silicon-on-insulator; Novosibirsk Institute of Semiconductor Physics; electron beam lithography; insulator structures; metal structures; microsized systems; molecular beam epitaxy; nanosized systems; nanotechnologies; scanning probe nanolithography; semiconductor electronics; silicon-on-insulator fabrication process;
fLanguage
English
Publisher
ieee
Conference_Titel
Science and Technology, 2003. Proceedings KORUS 2003. The 7th Korea-Russia International Symposium on
Print_ISBN
89-7868-617-6
Type
conf
Filename
1222827
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