• DocumentCode
    3572338
  • Title

    Aging study of optimized submicron n-MOSFET´s (DC, AC and alternating stress conditions): correlation between charge pumping and classical parameters

  • Author

    Revil, Nathalie ; Cristoloveanu, Sorin ; Mortini, Patrick

  • Author_Institution
    SGS-Thomson Microelectronics, 17 Avenue des Martyrs, 38019 Grenoble, France
  • fYear
    1992
  • Firstpage
    461
  • Lastpage
    464
  • Abstract
    The effects of static, dynamic and alternating stress conditions on the degradation rate of 0.8¿m LDD N-channel MOS transistors have systematically been compared. The parameters used in monitoring the aging were the threshold voltage, transconductance and charge pumping current. The results suggest that, at least for our devices, the degradation induced by a.c. stress can not be explained with a quasi-static model.
  • Keywords
    Acceleration; Aging; Charge carrier processes; Charge pumps; Degradation; MOSFET circuits; Microelectronics; Stress; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Print_ISBN
    444894780
  • Type

    conf

  • Filename
    5435138
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3572338