DocumentCode
3572420
Title
A 0.8 μm BiCMOS Technology for Mixed Analog-Digital Applications with Complementary Bipolar Transistors
Author
Arndt, J. ; Conze, P.
Author_Institution
TELEFUNKEN electronic GmbH Theresienstra?ƒ\x9fe 2, D-W7100 Heilbronn
fYear
1992
Firstpage
551
Lastpage
554
Abstract
BICMOS 3 is a submicron BiCMOS technology with high analog capability which exhibits vertical isolated NPN and PNP transistors, precise poly-Si/n+ capacitors and resistors and fast 0.8 μm CMOS with TiSi gates. The bipolar transistors are capable of 8 V supply voltage, the CMOS part is designed for 5 V operation. The aimed application field is telecommunications with focus on GSM cellular radio.
Keywords
Analog-digital conversion; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Capacitors; GSM; Isolation technology; Land mobile radio cellular systems; Resistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Print_ISBN
444894780
Type
conf
Filename
5435158
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