Title :
Carrier Temperature Dependent Gate Current Modeling for EEPROM Simulation
Author :
Rollins, J.G. ; Axelrad, V. ; Motzny, S.J.
Author_Institution :
Technology Modeling Associates, 300 Hamilton Ave. Palo Alto, California, USA
Abstract :
This paper presents comparisons of electric field and carrier temperature based gate and substrate current models. The covered models include the classical lucky electron model, a non-Maxwellian lucky electron model, and the Chynoweth law using standard electric fields and effective fields calculated from the carrier temperature. Important three-dimensional effects are analyzed using a three-dimensional program.
Keywords :
Boundary conditions; EPROM; Electrons; Hot carriers; Microelectronics; Poisson equations; Predictive models; Substrates; Temperature dependence; Tunneling;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
