• DocumentCode
    3572477
  • Title

    An analytical model for the optimization of High Injection MOS Flash E2PROM devices

  • Author

    Van Houdt, J. ; Groeseneken, G. ; Maes, H.E.

  • Author_Institution
    IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
  • fYear
    1992
  • Firstpage
    257
  • Lastpage
    260
  • Abstract
    In this paper, an analytical model is described which can be used for the optimization of High Injection MOS devices [1,2]. The model determines the unknown potentials inside the split gate structure and therefrom calculates the transient characteristics using the Lucky Electron Model (LEM) [3]. In the high injection regime, the model shows an excellent agreement with measured characteristics. This enables us to predict the programming speed and the threshold window for different voltages and device geometries, which is necessary for an adequate device optimization.
  • Keywords
    Analytical models; Character generation; Current measurement; Electrons; Geometry; Hot carrier injection; MOS devices; Microelectronics; Nonvolatile memory; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Print_ISBN
    444894780
  • Type

    conf

  • Filename
    5435175
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3572477