An analytical model for the optimization of High Injection MOS Flash E2PROM devices

In this paper, an analytical model is described which can be used for the optimization of High Injection MOS devices [1,2]. The model determines the unknown potentials inside the split gate structure and therefrom calculates the transient characteristics using the Lucky Electron Model (LEM) [3]. In the high injection regime, the model shows an excellent agreement with measured characteristics. This enables us to predict the programming speed and the threshold window for different voltages and device geometries, which is necessary for an adequate device optimization.