DocumentCode
3572516
Title
Analysis of Short Channel Effects in Poly-Si Thin Film Transistors: A New Method
Author
Reita, C. ; Migliorato, Piero ; Pecora, A. ; Fortunato, G. ; Mariucci, L.
Author_Institution
GEC-Marconi Hirst Research Centre, East Lane, Wembley, Middlsex, HA9 7PP, U.K.
fYear
1992
Firstpage
183
Lastpage
186
Abstract
Output characteristics of poly-Si thin film transistors (TFTs) have been measured for different channel length and temperature and a ``kink´´ is observed similar to the one reported for SOI MOSFETs. The effect is explained using a new analytical model which is possible to implement in a circuit simulator.
Keywords
Analog circuits; Analytical models; Chemical vapor deposition; Circuit simulation; Length measurement; Microelectronics; Plasma measurements; Plasma temperature; Temperature measurement; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Print_ISBN
444894780
Type
conf
Filename
5435188
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