Title :
Thin High-Dielectric TiO2 Films Prepared by Low Pressure MOCVD
Author :
Rausch, N. ; Burte, E.P.
Author_Institution :
Fraunhofer Arbeitsgruppe f?ƒ??r Integrierte Schaltungen, Artilleriestrasse 12, D-8520 Erlangen, FRG
Abstract :
Metal organic chemical vapor deposition (MOCVD) at low pressure was used to prepare thin titanium dioxide films in a hot wall-type vertical furnace for the application to ultra large scale integrated (ULSI) circuits as a dielectric material in low-power high-density DRAM´s. Stoichiometry, structure, as well as electrical properties were investigated before and after a post-deposition annealing treatment in oxygen atmosphere.
Keywords :
Annealing; Chemical vapor deposition; Circuits; Dielectric materials; Dielectric thin films; Furnaces; MOCVD; Organic chemicals; Titanium; Ultra large scale integration;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
