Low frequency noise in partially depleted SOI twin-MOSFET´s

This paper discusses the low-frequency noise behaviour in partially depleted SOI MOSFET´s. It is shown that while the noise in linear operation is little affected by using the twin-gate structure, a drastic reduction of the kink-related excess noise is observed, compared with a standard transistor. This reduction is explained by considering a recently proposed model for the low-frequency noise overshoot in SOI MOSFET´s. Finally, the effect of the twin-gate structure on film-related Random Telegraph Signals will be demonstrated and discussed.