Title :
Improving the Sensitivity of the Si3N4 Gate pH-ISFET using Modified Processing Techniques
Author :
Garde, A. ; Lane, W. ; Alderman, J.
Author_Institution :
National Microelectronics Research Centre, University College, Cork, Ireland.
Abstract :
A technique is described which results in an increase in the pH sensitivity of a Si3N4 surface. The technique involves Rapid Thermal Nitridation and provides a method of surface modification which does not interfere with standard processing.
Keywords :
Atomic layer deposition; Capacitance-voltage characteristics; Educational institutions; Electrodes; Hafnium; Microelectronics; Nitrogen; Rapid thermal processing; Surface treatment; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
