• DocumentCode
    3573153
  • Title

    Improving the Sensitivity of the Si3N4 Gate pH-ISFET using Modified Processing Techniques

  • Author

    Garde, A. ; Lane, W. ; Alderman, J.

  • Author_Institution
    National Microelectronics Research Centre, University College, Cork, Ireland.
  • fYear
    1994
  • Firstpage
    391
  • Lastpage
    394
  • Abstract
    A technique is described which results in an increase in the pH sensitivity of a Si3N4 surface. The technique involves Rapid Thermal Nitridation and provides a method of surface modification which does not interfere with standard processing.
  • Keywords
    Atomic layer deposition; Capacitance-voltage characteristics; Educational institutions; Electrodes; Hafnium; Microelectronics; Nitrogen; Rapid thermal processing; Surface treatment; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Print_ISBN
    863321579
  • Type

    conf

  • Filename
    5435743
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3573153