Title :
Self-Aligned AlGaAs/GaAs HBT Circuits Achieved by CBE Selective Base Contact Regrowth
Author :
Driad, R. ; Duchenois, A.M. ; Menouni, M. ; Alexandre, F. ; Legay, P. ; Launay, P.
Author_Institution :
FRANCE TELECOM, Centre National d´´Etudes des T?l?communications, Paris B, Laboratoire de Bagneux, 196 avenue Henri Rav?ra, BP 107, 92225 Bagneux (France).
Abstract :
This paper describes a self-aligned AlGaAs/GaAs heterojunction bipolar transistor technology using selective chemical beam epitaxy. The process is achieved by a selective regrowth of the extrinsic base layer. Digital circuits and laser drivers operating at 10 Gb/s have been successfully demonstrated for the first time with this process.
Keywords :
Chemical technology; Circuits; Doping; Epitaxial growth; Etching; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Tungsten;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
