DocumentCode
3573252
Title
A Novel Bipolar Device on SOI Wafers for Analog BICMOS Applications
Author
Yallup, Kevin ; Edwards, Susan ; Creighton, Oliver
Author_Institution
Analog Devices, Raheen Industrial Estate, Limerick, IRELAND
fYear
1994
Firstpage
565
Lastpage
568
Abstract
This work describes a novel bipolar transistor structure that can be fabricated on SOI wafers. The device combines a vertical base current flow path with a lateral collector flow path and is best suited to SOI layers in the thickness range from 0.2¿m to 5¿m.
Keywords
Analog circuits; BiCMOS integrated circuits; Bipolar transistors; CMOS process; Doping; Semiconductor films; Silicon devices; Textile industry; Voltage; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Print_ISBN
863321579
Type
conf
Filename
5435781
Link To Document