Automated Lateral Junction Measurements in Integrated Circuit Structures to 30 nm Precision

A new technique for the measurement of lateral junction distances under masking layer edges is described. The method is based on automatic electrical probing of special resistor bridge structures on-chip, and creates a large and statistically significant database from which high resolution measurements of lateral junctions down to 50nm can be extracted with high confidence. Results, data analysis, and limiting mechanisms are presented for boron-implanted and annealed Si VLSI structures in the lateral junction range 50 to 100 nm.