Title :
Electrical characterization of multi-ion beam reactive sputter deposited PZT thin films
Author :
Hu, H. ; Krupanidhi, S.B.
Author_Institution :
Mater. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
Abstract :
The electrical properties of multi-ion-beam reactive sputter (MIBERS) deposited PZT (lead zirconate titanate) (50/50) thin films were characterized in terms of low-field dielectric response, high-field polarization hysteresis, switching characteristics, fatigue and retention behaviors, I-V response, time-dependent dielectric breakdown, and C-V behavior. Many of the properties are found to be quite processing-sensitive, which opens up the possibility of modifying the film properties. The techniques of rapid thermal annealing (RTA) and low-energy oxygen ion bombardment seem to be very useful for this purpose
Keywords :
dielectric hysteresis; dielectric losses; dielectric polarisation; electric breakdown of solids; fatigue; ferroelectric thin films; incoherent light annealing; ion beam effects; lead compounds; permittivity; rapid thermal processing; sputtered coatings; C-V behavior; I-V response; MIBERS; O2 ion bombardment; P-E hysteresis loop; PZT thin films; PbZrO3TiO3; RTA; dielectric constant; dielectric loss; electrical properties; fatigue; high-field polarization hysteresis; low-field dielectric response; multi-ion beam reactive sputter deposition; rapid thermal annealing; retention behaviour; switching characteristics; time-dependent dielectric breakdown; Capacitance-voltage characteristics; Dielectric breakdown; Dielectric thin films; Fatigue; Hysteresis; Polarization; Rapid thermal annealing; Rapid thermal processing; Sputtering; Titanium compounds;
Conference_Titel :
Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on
Print_ISBN :
0-7803-0465-9
DOI :
10.1109/ISAF.1992.300597
