Title :
Small and Large Signal Model of a 150 GHz InAIAs/InGaAs HEMT
Author :
Diskus, C.G. ; Bergamaschi, C. ; Schefer, M. ; Patrick, W. ; Klepser, B.-U.H. ; Baechtold, W.
Author_Institution :
Microelectronics Institute, University of Linz, Altenberger Strasse 69, A-4040 Linz, Austria
Abstract :
A technology for producing high-speed MMICs utilizing InAlAs/InGaAs HEMTs has been established at our laboratory. In order to simulate circuits that exploit the nonlinear behaviour of the transistors, a large signal model of these HEMTs has been developed that describes device characteristics both in ohmic and saturation regime.
Keywords :
Circuit noise; Current measurement; Electrical resistance measurement; Equivalent circuits; Frequency; HEMTs; Indium compounds; Indium gallium arsenide; Noise measurement; Scattering parameters;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
