• DocumentCode
    3573356
  • Title

    Investigation of a-Si:H Density of States by Photo Induced Discharge

  • Author

    Mariucci, L. ; Carluccio, R. ; Massimiani, D. ; Fortunato, G.

  • Author_Institution
    IESS-CNR, via Cineto Romano 42, 00156 ROMA, ITALY
  • fYear
    1996
  • Firstpage
    1051
  • Lastpage
    1054
  • Abstract
    Photo-Induced Discharge (PID) technique has been used in order to probe the density of states (DOS) in a-Si:H thin film transistors (TFTs). According to the experimental parameters used, a determination of the DOS in n-channel devices has been obtained with particular sensitivity to the near midgap DOS.
  • Keywords
    Charge carrier processes; Charge measurement; Current measurement; Delay effects; Electron traps; Energy measurement; Pulse amplifiers; Pulse generation; Thin film transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5435828
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3573356