Title :
Investigation of a-Si:H Density of States by Photo Induced Discharge
Author :
Mariucci, L. ; Carluccio, R. ; Massimiani, D. ; Fortunato, G.
Author_Institution :
IESS-CNR, via Cineto Romano 42, 00156 ROMA, ITALY
Abstract :
Photo-Induced Discharge (PID) technique has been used in order to probe the density of states (DOS) in a-Si:H thin film transistors (TFTs). According to the experimental parameters used, a determination of the DOS in n-channel devices has been obtained with particular sensitivity to the near midgap DOS.
Keywords :
Charge carrier processes; Charge measurement; Current measurement; Delay effects; Electron traps; Energy measurement; Pulse amplifiers; Pulse generation; Thin film transistors; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
