Title :
Low Temperature Characteristics of Gated Lateral PNP Transistors
Author :
Deen, MJ ; Yan, Z.X.
Author_Institution :
School of Engineering Science, Simon Fraser University, Burnaby, British Columbia, Canada V5A 1S6
Abstract :
Low temperature characteristics of gated lateral PNP (LPNP) transistors made from 0.8¿m BiCMOS technology are described. Gate-base shorted or gate-emitter shorted BJT configurations are used for comparison for temperature variation from 297K to 77K. Very high current gain (ßF = ~800) at low current levels (Ic ≪ 1¿A), and remarkable low temperature current gain characteristics (ßF ≫ 5×105 at ~97K) were observed for the gate-base shorted lateral PNP transistors.
Keywords :
BiCMOS integrated circuits; Bipolar transistors; CMOS integrated circuits; CMOS technology; FETs; MOS devices; Performance gain; Temperature; Testing; Very large scale integration;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
