Title :
High Quality Polycrystalline Thin Films Transistors Made by Excimer Laser Crystallisation
Author :
Legagneux, P. ; Petinot, F. ; Huet, O. ; Plais, F. ; Reita, C. ; Pribat, D. ; Carluccio, R. ; Pecora, A. ; Mariucci, L. ; Fortunato, G.
Author_Institution :
Thomson CSF-LCR, Domaine de Corbeville, 91404 Orsay Cedex, France
Abstract :
We have studied excimer laser crystallisation of a-Si films and in particular device performance as a function of the crystalline quality of the polysilicon films. For optimised irradiation conditions, we report mobilities of 350 and 150 cm2/Vs respectively for n and p-type devices and a delay time of 4 ns / stage measured at 10V on 5 ¿m CMOS ring oscillators.
Keywords :
Crystalline materials; Crystallization; Etching; Grain size; Laser beams; Optical materials; Optical pulses; Pulsed laser deposition; Scanning electron microscopy; Thin film transistors;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
