A Dynamic Model for Multiterminal Bipolar Devices Used in Smart-Power Applications

Complex technologies merging low-voltage bipolar devices and power transistors allow more smart functions at low chip cost but pose problems during the design phase because there is no way to predict the influence of the high-voltage transistor over the control components by using standard BJT models. In this work we introduce a dynamic model for the five-terminal bipolar devices used in these smart power applications. The model accounts for all main static and dynamic parasitic effects and shows good agreement with experimental data on both simple devices and complex ICs currently implemented in commercial products.