Field modeling and analysis of terahertz transistor

Author

Afshani, Amir ; Abdipour, Abdolali ; Mirzavand, Rashid

Author_Institution

Dept. Electr. Eng., Amirkabir Univ. of Technol., Tehran, Iran

fYear

2015

Firstpage

1

Lastpage

4

Abstract

In this paper we have analyzed a terahertz transistor with both distributed and slice modeling and the results are compared with lumped model analysis. The transistor used in this analysis was reported in reference to have cutoff frequency greater than 1 THz based on extrapolated MSG/MAG figure which was derived from lumped model. However, analysis presented in this paper indicates that the cutoff frequency is well lower than 1 THz. S-parameter plots for distributed, slice and lumped models are presented and compared. In the distributed and slice modeling, elements of the passive section are calculated using finite difference method applied to the transistor structure. Moreover effect of loading in the electrodes of the transistor is studied.

Keywords

finite difference methods; high electron mobility transistors; semiconductor device models; submillimetre wave transistors; terahertz wave devices; HEMT; cutoff frequency; distributed modelling; electrodes; extrapolated MSG-MAG figure; field modeling; finite difference method; lumped model analysis; passive section; slice modeling; terahertz transistor analysis; transistor structure; Analytical models; Integrated circuit modeling; Load modeling; Power transmission lines; Scattering parameters; Transistors; Transmission line matrix methods; HEMT; THz transistors; distributed modeling; effect of loading; finite difference; slice modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Millimeter-Wave and Terahertz Technologies (MMWATT), 2014 Third Conference on

Print_ISBN

978-1-4799-6590-8

Type

conf

DOI

10.1109/MMWaTT.2014.7057192

Filename

7057192