Title :
2D AlN layer formation on (111)Si surface by ammonia MBE
Author :
Malin, T.V. ; Mansurov, V.G. ; Galitsyn, Yu.G. ; Zhuravlev, K.S.
Author_Institution :
Siberian Branch, Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia
Abstract :
An (0001)AlN ultrathin layer formation in ammonia MBE conditions have been investigated by RHEED. Two steps procedure was used: at first, well ordered (8×8) silicon nitride was prepared on the atomically clean Si surface under ammonia flux. Then AlN was formed by deposition of Al atoms onto the (8×8) surface. Temperature dependence of the AlN formation rate was obtained and desorption energy (Edes=2.1 eV) of Al atoms from the surface was estimated. For the first time the (4×4) superstructure of AlN on the (111)Si surface was observed by RHEED. Precise measurements of the AlN in-plain lattice parameter evolution during the initial stages of the AlN formation were carried out. The lattice constant of 3.08 A is found in good agreement with ab initio calculations for a graphene-like AlN.
Keywords :
III-V semiconductors; ab initio calculations; aluminium compounds; desorption; lattice constants; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; surface structure; wide band gap semiconductors; (111)Si surface; 2D (0001)AlN ultrathin layer formation; Al atoms; AlN; AlN formation rate; AlN in-plain lattice parameter; RHEED; Si; ab initio calculations; ammonia MBE conditions; ammonia flux; desorption energy; graphene-like AlN; lattice constant; reflection high-energy electron diffraction; silicon nitride; superstructure; III-V semiconductor materials; Lattices; Silicon; Substrates; Surface cleaning; Temperature measurement; RHEED; Si substrate; ammonia MBE; graphene-like AlN; reconstruction;
Conference_Titel :
Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2014 International Conference on
DOI :
10.1109/3M-NANO.2014.7057317
