Temperature dependence of photoluminescence kinetics of GaN/AlN quantum dots

Author

Aleksandrov, I.A. ; Mansurov, V.G. ; Zhuravlev, K.S.

Author_Institution

Inst. of Semicond. Phys., Novosibirsk, Russia

fYear

2014

Firstpage

53

Lastpage

56

Abstract

Temperature dependence of time-resolved photoluminescence of GaN/AlN quantum dots grown by molecular beam epitaxy has been investigated. Photoluminescence kinetics of GaN/AlN quantum dots is governed by radiative recombination in quantum dots and weakly depends on temperature. Photoluminescence intensity of GaN/AlN quantum dots decreases with increasing temperature. This decrease has been attributed to nonradiative recombination through deep centers in the wetting layer.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; molecular beam epitaxial growth; optical materials; photoluminescence; semiconductor growth; semiconductor quantum dots; thermoluminescence; wetting; wide band gap semiconductors; GaN-AlN; deep centers; molecular beam epitaxy; nonradiative recombination; photoluminescence intensity; photoluminescence kinetics; quantum dots; radiative recombination; temperature dependence; time-resolved photoluminescence; wetting layer; Gallium nitride; III-V semiconductor materials; Photoluminescence; Photonics; Substrates; Temperature dependence; Temperature measurement; AlN; GaN; photoluminescence; quantum dots;

fLanguage

English

Publisher

ieee

Conference_Titel

Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2014 International Conference on

Type

conf

DOI

10.1109/3M-NANO.2014.7057319

Filename

7057319