Title :
High performance multi-mode SRAM cells
Author :
Rajani, H.P. ; Kulkarni, S.Y.
Author_Institution :
Dept. of E&C, KLE Dr. MSS CET, Belgaum, India
Abstract :
New Multi-mode SRAM cells to suit applications with different power consumption during both active and sleep mode of states with data preservation requirements are discussed in this work. Proposed PSVG and MNSVP SRAM cells are capable of substantial reduction of leakage power resulting due to subthreshold leakage current and gate leakage current with good access timings.
Keywords :
MOS memory circuits; SRAM chips; leakage currents; logic gates; MNSVP SRAM cells; PSVG SRAM cells; Pmos sleep transistor for virtual ground; active mode; data preservation requirements; gate leakage current; leakage power reduction; multimode Nmos sleep transistor for virtual power; multimode SRAM cells; power consumption; sleep mode; subthreshold leakage current; Electric potential; Leakage currents; Power dissipation; SRAM cells; Switching circuits; Transistors; Multi-mode SRAM; data preservation; subthreshold leakage current and gate leakage current;
Conference_Titel :
Circuits, Communication, Control and Computing (I4C), 2014 International Conference on
Print_ISBN :
978-1-4799-6545-8
DOI :
10.1109/CIMCA.2014.7057836
