DocumentCode :
3576873
Title :
Methods of Increasing Voltage Gain of the Low-Voltage Classical Stages
Author :
Prokopenko, Nikolay N. ; Budyakov, Petr S. ; Butyrlagin, Nikolay V.
Author_Institution :
Don State Tech. Univ., Rostov-on-Don, Russia
fYear :
2014
Firstpage :
207
Lastpage :
211
Abstract :
Analysis of architectural and circuit limitations on voltage gain (Gain) of the classical stages with a common base and a common emitter at a low-voltage supply are considered. It is also considered methods of improving voltage gain which are based on the principles of their mutual compensation impedances that have a negative impact on voltage gain. The mathematical conditions of presented methods are also considered. The paper consider problem of limiting voltage gain stage with a common base, method of the current compensation of the impedance of the collector load, method of mutual compensation of the collector load impedance in the stages with a common base and method of increase voltage gain in stage with a common emitter. The considered features of the design of the compensation circuits show that this circuit solution is quite promising on the SiGe process, in which the p-n-p transistors are not realized.
Keywords :
Ge-Si alloys; network synthesis; semiconductor materials; SiGe; common base; common emitter; current compensation; low-voltage classical stages; low-voltage supply; mathematical conditions; mutual compensation impedances; voltage gain; Gain; Impedance; Mirrors; Resistance; Resistors; Silicon germanium; Transistors; SiGe; common base; common emitter; current compensation; voltage gain;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computational Intelligence, Communication Systems and Networks (CICSyN), 2014 Sixth International Conference on
Print_ISBN :
978-1-4799-5075-1
Type :
conf
DOI :
10.1109/CICSyN.2014.51
Filename :
7059171
Link To Document :
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