Optimizing the performance of a solar cell based on new materials

Author

Aissat, Abdelkader ; Benahmed, A. Moumene ; Bestam, Rachid ; Vilcot, Jean Pierre

Author_Institution

LATSI Lab., Univ. Saad Dahlab, Blida, Algeria

fYear

2014

Firstpage

181

Lastpage

184

Abstract

This work is based on modeling and simulation GaAsNBi/GaAs structure. The structure was optimized to improve the efficiency of conversion. The effect of concentrations of N and Bi on the strained, energy bandgap, and the characteristic J (V) is taken into consideration. For concentrations (N = 2%, Bi = 8%) energy bandgap is 0.90eV. If we increase the two concentrations (N = 3%, Bi = 12%) the gap equal to 0.62eV. This allows us to grow the absorption and performance. For (N = 2%, Bi = 10) was obtained in an acquiesce of approximately 24.5%. This study allows us to improve the efficiency of solar cells and multi-quantum wells.

Keywords

III-V semiconductors; arsenic compounds; energy gap; gallium arsenide; nitrogen compounds; semiconductor quantum wells; solar cells; GaAsNBi-GaAs; absorption; electron volt energy 0.62 eV; electron volt energy 0.9 eV; energy bandgap; energy conversion efficiency improvement; multiquantum well; solar cell performance optimization; Bismuth; Gallium arsenide; Nitrogen; Photonic band gap; Propulsion; Quantum mechanics; GaAsNBi; New Materials; Semiconductor III–V; photovoltaics; solar cell;

fLanguage

English

Publisher

ieee

Conference_Titel

Renewable and Sustainable Energy Conference (IRSEC), 2014 International

Print_ISBN

978-1-4799-7335-4

Type

conf

DOI

10.1109/IRSEC.2014.7059748

Filename

7059748