Analytical calculation of photocurrent density in CIGS double graded solar cell

Author

Ihalane, El Hassane ; Atourki, Lahoucine ; Alahyane, Lahbib ; Boulkaddat, Lahcen ; El Hamri, El Houcine ; Kirou, Hassan ; Ihlal, Ahmed ; Bouabid, Khalid

Author_Institution

Dept. Phys., Univ. Ibn Zohr, Agadir, Morocco

fYear

2014

Firstpage

42

Lastpage

45

Abstract

A theoretical analysis of double-graded bandgap Cu(In,Ga)Se₂ solar cell for the simulation of the photocurrent has been developed. The photocurrent density as a function of front and back bandgaps and electron diffusion length has been calculated. Therefore, based on these concepts, optimum back bandgap is around 1.4 eV, assuming the band-gap grading in the space charge region and near the back surface region of the CIGS absorber layer with variation spatial of Ga content. The simulation results demonstrates a photocurrent approaching 35.26 mA/cm².

Keywords

copper compounds; current density; diffusion; photoconductivity; solar cells; space charge; CIGS absorber layer; CIGS double graded bandgap solar cell; Cu(InGa)Se₂; electron diffusion length; photocurrent density analytical calculation; space charge region; Absorption; Lighting; Photonic band gap; Radiative recombination; Thyristors; Band gap grading; CIGS; Photocurrent; Solar cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Renewable and Sustainable Energy Conference (IRSEC), 2014 International

Print_ISBN

978-1-4799-7335-4

Type

conf

DOI

10.1109/IRSEC.2014.7059756

Filename

7059756