DocumentCode :
3577354
Title :
Analytical calculation of photocurrent density in CIGS double graded solar cell
Author :
Ihalane, El Hassane ; Atourki, Lahoucine ; Alahyane, Lahbib ; Boulkaddat, Lahcen ; El Hamri, El Houcine ; Kirou, Hassan ; Ihlal, Ahmed ; Bouabid, Khalid
Author_Institution :
Dept. Phys., Univ. Ibn Zohr, Agadir, Morocco
fYear :
2014
Firstpage :
42
Lastpage :
45
Abstract :
A theoretical analysis of double-graded bandgap Cu(In,Ga)Se2 solar cell for the simulation of the photocurrent has been developed. The photocurrent density as a function of front and back bandgaps and electron diffusion length has been calculated. Therefore, based on these concepts, optimum back bandgap is around 1.4 eV, assuming the band-gap grading in the space charge region and near the back surface region of the CIGS absorber layer with variation spatial of Ga content. The simulation results demonstrates a photocurrent approaching 35.26 mA/cm2.
Keywords :
copper compounds; current density; diffusion; photoconductivity; solar cells; space charge; CIGS absorber layer; CIGS double graded bandgap solar cell; Cu(InGa)Se2; electron diffusion length; photocurrent density analytical calculation; space charge region; Absorption; Lighting; Photonic band gap; Radiative recombination; Thyristors; Band gap grading; CIGS; Photocurrent; Solar cells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Renewable and Sustainable Energy Conference (IRSEC), 2014 International
Print_ISBN :
978-1-4799-7335-4
Type :
conf
DOI :
10.1109/IRSEC.2014.7059756
Filename :
7059756
Link To Document :
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