Title :
Fabrication of topological-switching RAM (TRAM)
Author :
Takaura, N. ; Ohyanagi, T. ; Tai, M. ; Morikawa, T. ; Kinoshita, M. ; Akita, K.
Author_Institution :
Phase Change Device Res. Group, Low-power Electron. Assoc. & Project (LEAP), Tsukuba, Japan
Abstract :
The fabrication of topological-switching random-access memory (TRAM), a new type of phase change memory, was investigated. The deposition and etching process technologies of a GeTe/Sb2Te3 superlattice memory cell were developed and micro test structures of TRAM were fabricated. Analysis of the fabricated structures revealed that the electrical properties of TRAM were different from those of conventional phase change memory and the reset voltage of TRAM, 0.6 V, was less than that of PRAM, 1 V. The non-melting behaviors of resistance change in TRAM were clarified via thermal-conductivity measurements and device simulation.
Keywords :
coating techniques; etching; integrated circuit manufacture; phase change memories; superlattices; switching circuits; thermal conductivity measurement; thermal management (packaging); GeTe-Sb2Te3; PRAM; TRAM fabrication; deposition process technologies; etching process technologies; microtest structures; phase change memory; superlattice memory cell; thermal-conductivity measurements; topological-switching random-access memory; voltage 0.6 V; voltage 1 V; Dry etching; Films; Phase change random access memory; Resistance; Thermal conductivity; Charge Injection enhancement; GeTe/Sb2Te3 superlattice; TRAM (Topplogical switching RAM);
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2014 14th Annual
Print_ISBN :
978-1-4799-4203-9
DOI :
10.1109/NVMTS.2014.7060835
