Title :
ZrO2 doped GeTe for aerospace applications
Author :
Chua, E.K. ; Yeap, C.C. ; Li, M.H. ; Lim, K.G. ; Law, L.T. ; Wang, W.J. ; Yeo, E.G. ; Ernult, F.
Author_Institution :
Data Storage Inst., A*STAR Agency for Sci., Technol. & Res., Singapore, Singapore
Abstract :
Varying ZrO2 doped GeTe phase change material of atomic percent greater than 10% were deposited and characterized. It was discovered that the crystallization of amorphous doped GeTe is suppressed by the incorporation of ZrO2 at lower concentration but the crystallization improves as the concentration increases as depicted by the activation energy for different concentration. Thus it resulted in an optimum concentration for highest activation energy for better stability. ZrO2 concentration at 11% which has the highest activation energy of 3.64 eV and crystallization temperature of 210 °C with 10 years retention of 135 °C was fabricated, tested and compared with GeTe. Doped GeTe achieved power reduction of 55% as compared to GeTe and achieved endurance of 104 cycles.
Keywords :
aerospace materials; amorphous semiconductors; crystallisation; germanium alloys; phase change materials; semiconductor doping; semimagnetic semiconductors; tellurium alloys; zirconium compounds; GeTe:ZrO2; aerospace applications; atomic percent greater; crystallization; electron volt energy 3.64 eV; phase change material; temperature 135 C; temperature 210 C; time 10 year; Crystallization; Doping; Electrical resistance measurement; Resistance; Temperature measurement; Thermal stability; Voltage measurement; Aerospace; GeTe; PCRAM; ZrO2-doped; stability;
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2014 14th Annual
Print_ISBN :
978-1-4799-4203-9
DOI :
10.1109/NVMTS.2014.7060842
