Title :
The temperature dependence of threshold voltage variations due to oblique single grain boundary in 3D NAND unit cells
Author :
Jungsik Kim ; Bo Jin ; Meyyappan, M. ; Hyeongwan Oh ; Junyoung Lee ; Taiuk Rim ; Chang-Ki Baek ; Jeong-Soo Lee
Author_Institution :
Div. of IT Convergence Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
Abstract :
In this work, the oblique single grain boundary (oSGB) in 3D NAND unit cells is simulated with various temperatures to study threshold voltage (Vth) variation due to oSGB in 3D NAND unit cell of poly-Si channel. As the temperature increases, the overall Vth variations with oSGB decrease because of thermionic effect and more free carrier from generation effect. In addition, the difference of Vth variation become larger as the oSGB leans toward source or drain sides in poly-Si channel.
Keywords :
NAND circuits; elemental semiconductors; flash memories; silicon; 3D NAND unit cells; Si; drain sides; flash memory; free carrier; generation effect; oSGB; oblique single grain boundary; polychannel; source sides; temperature dependence; thermionic effect; threshold voltage variations; Educational institutions; Electron devices; Electron traps; Grain boundaries; Temperature dependence; Three-dimensional displays; Threshold voltage; 3D NAND; Single grain boundary; poly-Silicon channel; temperature;
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2014 14th Annual
Print_ISBN :
978-1-4799-4203-9
DOI :
10.1109/NVMTS.2014.7060844
