DocumentCode :
3577829
Title :
Investigation of power dissipation for ReRAM in crossbar array architecture
Author :
Wookyung Sun ; Hyein Lim ; Hyungsoon Shin ; Wootae Lee
Author_Institution :
Dept. of Electron. Eng., Ewha Womans Univ., Seoul, South Korea
fYear :
2014
Firstpage :
1
Lastpage :
4
Abstract :
Power consumption of large-scale crossbar array architecture is investigated by the comprehensive crossbar array matrix model. The power dissipation is examined as functions of array size, leakage current of selector, and various bias schemes. The power consumption increases as the array size and the leakage current of selector increases. In addition, 1/3 bias scheme shows power consumption about 1~2 orders of magnitude larger than other bias schemes. This phenomenon is induced from the unselected cells which is delivered with voltage about Vdd/3, whereas the voltage of unselected cells are almost 0 V for 1/2 bias and floating bias schemes.
Keywords :
leakage currents; low-power electronics; resistive RAM; ReRAM; array size; bias schemes; crossbar array architecture; power consumption; power dissipation; selector leakage current; Arrays; Leakage currents; Power demand; Power dissipation; Resistors; Switches; ReRAM; crossbar array; power dissipation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2014 14th Annual
Print_ISBN :
978-1-4799-4203-9
Type :
conf
DOI :
10.1109/NVMTS.2014.7060847
Filename :
7060847
Link To Document :
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