Title :
Novel strained SiGe/TaOx/Ta RRAM device fabricated by fully CMOS compatible process
Author :
Jiang, Y. ; Tan, C.C. ; Yeo, E.G. ; Li, M.H. ; He, W. ; Zhuo, V.Y.-Q. ; Fang, Z. ; Weng, B.B.
Author_Institution :
Data Storage Inst., A*STAR, Singapore, Singapore
Abstract :
A novel strained SiGe/TaOx/Ta RRAM device is successfully demonstrated via a fully CMOS compatible process. The bottom electrode (BE) is made of strained single crystalline SiGe layer where both n type and p type SiGe layer as the BE. Typical bipolar switching behavior is obtained for such RRAM devices. Cycle to cycle uniformity are investigated in this work, and it is found that n type SiGe as BE shows better uniformity due to the better dopant distribution for Arsenic than Boron in SiGe layer.
Keywords :
CMOS integrated circuits; Ge-Si alloys; MIS devices; electrodes; resistive RAM; tantalum; tantalum compounds; CMOS compatible process; RRAM device; SiGe-TaOx-Ta; bipolar switching behavior; bottom electrode; n-type SiGe layer; p-type SiGe layer; resistive random access memory; strained single crystalline layer; CMOS integrated circuits; Electrodes; Epitaxial growth; Silicon germanium; Substrates; Switches; CMOS compatible process; Resistive random access memory (RRAM); SiGe Electrode; TaOx;
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2014 14th Annual
Print_ISBN :
978-1-4799-4203-9
DOI :
10.1109/NVMTS.2014.7060849
