8-inch wafer-scale HfOx-based RRAM for 1S-1R cross-point memory applications

Author

Jiyong Woo ; Jeonghwan Song ; Kibong Moon ; Seokjae Lim ; Daeseok Lee ; Sangheon Lee ; Prakash, A. ; Hyunsang Hwang ; Jongmin Baek ; Kee-Won Kwon

Author_Institution

Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea

fYear

2014

Firstpage

1

Lastpage

4

Abstract

In this paper, a bipolar resistive random access memory (RRAM) device with a fab-friendly materials stack (TiN/Ti/HfO₂/TiN) and process in a via-hole substrate with 200 nm cell size was successfully demonstrated on an 8-inch wafer scale. Furthermore, the robust device characteristics with reliable switching uniformity and stability were experimentally confirmed at the wafer level. Finally, from the standpoint of array architecture, the fabricated memory cell was evaluated with various selector devices such as a conventional silicon-based transistor and a newly developed tunneling-based diode device.

Keywords

bipolar memory circuits; circuit reliability; circuit stability; hafnium compounds; resistive RAM; titanium; titanium compounds; 1S-IR cross-point memory application; TiN-Ti-HfO₂-TiN; bipolar resistive random access memory device; fab-friendly material stack; reliability; silicon-based transistor; size 200 nm; size 8 inch; stability; tunneling-based diode device; via-hole substrate; wafer-scale RRAM; Gettering; Hafnium compounds; Resistance; Semiconductor device reliability; Switches; Tin; 1S-1R configuration; 1T-1R configuration; HfO2; RRAM;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium (NVMTS), 2014 14th Annual

Print_ISBN

978-1-4799-4203-9

Type

conf

DOI

10.1109/NVMTS.2014.7060853

Filename

7060853