Title :
Adjustable voltage dependent switching characteristics of PRAM for low voltage programming of multi-level resistances
Author :
Gwihyun Kim ; Sanghyun Lee ; Seungwoo Hong ; Seung Jae Baik ; Hori, Hideki ; Dong-ho Ahn
Author_Institution :
Dept. of Electr., Hankyong Nat. Univ., Anseong, South Korea
Abstract :
Low voltage programming of multi-level-cell phase change random access memory (MLC PRAM) is important for future low power high density applications of PRAM devices [1]. We have characterized voltage dependent resistance switching characteristics of PRAM devices with various voltage pulses, based on which a dual-pulse programming method is systematically proposed to demonstrate some principles of low voltage MLC programming. A microstructural model is also introduced to provide a comprehensive explanation of resistance swiching for various voltage pulses.
Keywords :
integrated circuit modelling; low-power electronics; phase change memories; switching circuits; MLC PRAM; PRAM devices; adjustable voltage dependent switching characteristics; dual-pulse programming method; low voltage MLC programming; microstructural model; multilevel-cell phase change random access memory; voltage dependent resistance switching characteristics; voltage pulses; Low voltage; Phase change random access memory; Programming; Resistance; Switches; Threshold voltage; Voltage control; MLC PRAM; microstructual model; programming pulse; reset initialization;
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2014 14th Annual
Print_ISBN :
978-1-4799-4203-9
DOI :
10.1109/NVMTS.2014.7060862
