The degradation of N-type symmetrical lateral double diffused MOS with different gate voltage stress condition

Author

He, X.W. ; Wu, S.L. ; Liu, Y.W. ; Zhang, A.J. ; Zhang, C.W. ; Sun, W.F.

Author_Institution

CSMC Technol. Corp., Wuxi, China

fYear

2014

Firstpage

1

Lastpage

2

Abstract

In this paper, a comprehensive study of different level hot carrier stress conditions for N-type symmetrical lateral double diffused MOS (ns-LDMOS) is carried out. It is noted that there are two peaks bulk current observed for different gate voltage due to Kirk effect happening. The experimental results show two turn-over of Idsat degradation with low Vgs (mainly caused by impact ionization current increase), and one turn-over of Idsat degradation with median Vgs, which is caused by interface states generation. For high Vgs condition, significant damage is occurred on ns-LDMOS. A series of EFA and PFA demonstrate that this damage is not caused by hot carrier injection, but the self-heating effect in body of ns-LDMOS.

Keywords

MOSFET; hot carriers; internal stresses; ionisation; semiconductor device testing; Kirk effect; N-type symmetrical lateral double diffused MOS; bulk current; gate voltage stress condition; hot carrier injection; hot carrier stress conditions; interface state generation; ionization current; ns-LDMOS; self-heating effect; CMOS integrated circuits; Current measurement; Degradation; Equivalent circuits; Integrated circuit reliability; Logic gates; Kirk effect; hot-carrier reliability; saturation drain current; symmetrical lateral DMOS;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on

Type

conf

DOI

10.1109/EDSSC.2014.7061094

Filename

7061094