Title :
High performance RF LDMOS power transistor for the new generation base station
Author :
Fucheng Hou ; Dajie Zeng
Author_Institution :
Suzhou Inst. of Nano-Tech & Nano-Bionics, Suzhou, China
Abstract :
In this paper, we present an high performance RF LDMOS transistor based on modified CMOS technology. High power density and low parasitic output capacitance is achieved by the co-optimization among the length of the field plate, the oxide thickness, the drift region doping energy, and the doping and the thickness of epitaxy layer. Excellent characterizations are achieved for Multi-Carrier 3G Base Station applications with linear gain of 19dB at 2170MHz, high efficiency of 66% and 52.7dBm of 3dB power compression point. A load pull system is set up to test the optimum impedance points of the transistor, and the RF performance is evaluated by designing internal matching network and a TRL test fixture.
Keywords :
UHF field effect transistors; optimisation; power MOSFET; semiconductor doping; semiconductor epitaxial layers; RF LDMOS power transistor; TRL test fixture; cooptimization; drift region doping energy; efficiency 66 percent; epitaxy layer thickness; frequency 2170 MHz; gain 19 dB; high power density; internal matching network; load pull system; low parasitic output capacitance; modified CMOS technology; multicarrier 3G base station application; Electric breakdown; Fixtures; ISO standards; Logic gates; Multiaccess communication; Spread spectrum communication; RF LDMOS; TRL test fixture; capasitor density; drift region; electric field;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061095
