Title :
The Function of IR thermal imaging technology for device and circuit reliability research
Author :
Fang fang Song ; Xiaoqi He ; Yunfei En
Author_Institution :
Sch. of Mech. & Automotive Eng., South China Univ. of Technol., Guangzhou, China
Abstract :
Along with the infrared technical rapid development, infrared radiation (IR) thermal imaging technology is widely applied in device and circuit reliability research. For device and circuit reliability study, IR thermal imaging technology is best for getting the peak temperature and temperature distribution. With the peak temperature and temperature distribution, the thermal information of the devices were evaluated and optimized to meet the design requirement. Secondly, IR thermal imaging technology is used to position hotspot for failures analysis, example for especially increases in elevated leakage currents. However, IR thermal imaging technology can provide evidence of excessive temperature rise due to power dissipation. It can identify root-cause of failures at temperatures below expectations.
Keywords :
circuit reliability; infrared imaging; IR thermal imaging; circuit reliability; device reliability; failures analysis; infrared radiation thermal imaging; leakage currents; power dissipation; temperature distribution; Electrical resistance measurement; Integrated circuit reliability; Position measurement; Semiconductor device measurement; Temperature; Temperature measurement; IR thermal imaging technology; hotspot; peak temperature; reliability research;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061109