Title :
Failure analysis of operational amplifier due to ESD stress in complementary bipolar process
Author :
Liu Fan ; Liu Luncai ; He Linfeng ; Wang Yuxin
Author_Institution :
Analog IC Design Center, Sichuan Inst. of Solid-state Circuits, Chongqing, China
Abstract :
This paper presents a research on ESD problems for a complementary bipolar (CB) process based high-speed operational amplifier (OP). The failure location and failure mode of the OP under ESD stress was verified using KeyTek ZapMaster Mk.2. Based on the analysis, failure mechanism was found, according to which modifications were made on the new batch. The modified high speed OP achieves > 4KV ESD protection capability.
Keywords :
electrostatic discharge; failure analysis; operational amplifiers; CB process-based high-speed OP; ESD problem; ESD protection capability; ESD stress; KeyTek ZapMaster Mk.2; complementary bipolar process; failure analysis; failure location; failure mechanism; failure mode; modified high-speed OP; operational amplifier; Discharges (electric); Electrostatic discharges; Laboratories; Stress; ESD; IV curves; bipolar; failure analysis;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061112
