• DocumentCode
    3578039
  • Title

    An InP/InGaAs double heterojunction bipolar transistor

  • Author

    Yu-Qiu Chen ; Shiou-Ying Cheng

  • Author_Institution
    Dept. of Electron. Eng., Nat. I-Lan Univ., I-Lan, Taiwan
  • fYear
    2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this presentation, we demonstrated an InP/InGaAs double heterojunction bipolar transistor. Based on the used linear-graded AlXGa1-X layer, an approximate continuous conduction band structure between the InGaP emitter and GaAs base is obtained. Theoretical simulation results show that a potential spike at emitter/base (E/B) junction is indeed removed.
  • Keywords
    III-V semiconductors; aluminium compounds; conduction bands; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; AlXGa1-X; InGaP; InP-InGaAs; continuous conduction band structure; double heterojunction bipolar transistor; emitter-base junction; linear-graded layer; Epitaxial growth; Indium gallium arsenide; Indium phosphide; Substrates; Transistors; double he terojunction bipolar transistor; linear-graded; potential spike;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
  • Type

    conf

  • DOI
    10.1109/EDSSC.2014.7061115
  • Filename
    7061115
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3578039