Title :
An InP/InGaAs double heterojunction bipolar transistor
Author :
Yu-Qiu Chen ; Shiou-Ying Cheng
Author_Institution :
Dept. of Electron. Eng., Nat. I-Lan Univ., I-Lan, Taiwan
Abstract :
In this presentation, we demonstrated an InP/InGaAs double heterojunction bipolar transistor. Based on the used linear-graded AlXGa1-X layer, an approximate continuous conduction band structure between the InGaP emitter and GaAs base is obtained. Theoretical simulation results show that a potential spike at emitter/base (E/B) junction is indeed removed.
Keywords :
III-V semiconductors; aluminium compounds; conduction bands; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; AlXGa1-X; InGaP; InP-InGaAs; continuous conduction band structure; double heterojunction bipolar transistor; emitter-base junction; linear-graded layer; Epitaxial growth; Indium gallium arsenide; Indium phosphide; Substrates; Transistors; double he terojunction bipolar transistor; linear-graded; potential spike;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061115
