Title :
Development of low temperature amorphous tin-doped indium oxide thin-film transistors technology
Author :
Yang Liu ; Longyan Wang ; Shengdong Zhang
Author_Institution :
Sch. of Electron. & Comput. Eng., Peking Univ., Shenzhen, China
Abstract :
We successfully fabricated high performance amorphous tin-doped indium oxide (a-ITO) thin film transistors (TFTs) at low temperature (≤ 150 °C) for full-transparent, flexible and large area electronics applications. The fabricated a-ITO TFT has a typical threshold voltage (Vth) of about 0.12 V, an acceptable carrier mobility of 7.6 cm2/V·s, and a steep subthreshold swing of 174 mV/decade. The on/off current ratio is more than 1×107.
Keywords :
carrier mobility; indium compounds; thin film transistors; ITO; TFT; acceptable carrier mobility; electronics application; low temperature amorphous tin-doped indium oxide thin-film transistor; on-off current ratio; steep subthreshold swing; Annealing; Tin-doped Indium oxide TFT; amorphous; low temperature; post-annealing;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061118
