Effects of depletion region in GaN-based metal-semiconductor-metal planar inter-digitated varactor

Author

Bo Zhang ; Jinyan Wang ; Xiaoping Li ; Chunyan Jin ; Haisang Jiang ; Min Yu

Author_Institution

Shenzhen Grad. Sch., Peking Univ., Shenzhen, China

fYear

2014

Firstpage

1

Lastpage

2

Abstract

AlGaN/GaN metal-semiconductor-metal inter-digitated varactors which are compatible with the standard HEMT process were fabricated. By analyzing equivalent circuit model,we concluded that the minimum capacitance of single finger depends on the sidewall capacitance. The depletion region beyond the gate gradually formed as the 2DEG channel was depleting, and a maximum width of depletion region of 4.65μm was obtained, with a width of 3μm and a bias voltage of 6V.

Keywords

III-V semiconductors; aluminium compounds; equivalent circuits; gallium compounds; high electron mobility transistors; two-dimensional electron gas; varactors; wide band gap semiconductors; 2DEG channel; AlGaN-GaN; bias voltage; depletion region effect; depletion region width; equivalent circuit model; gallium nitride-based metal-semiconductor-metal planar interdigitated varactor; sidewall capacitance; single-finger capacitance; size 3 mum; size 4.65 mum; standard HEMT process; voltage 6 V; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Semiconductor device measurement; Semiconductor device modeling; Standards; 2DEG channel; GaN; depletion region; minimum capacitance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on

Type

conf

DOI

10.1109/EDSSC.2014.7061127

Filename

7061127