DocumentCode
3578099
Title
Design of a 440GHz Sub-harmonic GaAs Schottky diode mixer
Author
Ruizhen Chen ; Bo Zhang ; Yong Fan
Author_Institution
EHF Key Lab. of Fundamental Sci., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear
2014
Firstpage
1
Lastpage
2
Abstract
This paper present the design and optimization of a 440GHz sub-harmonic mixer based on an anti-parallel pair of planar GaAs Schottky diodes which is flip-chipped onto the 100 um thick quartz substrate. Simulation of the sub-harmonic mixer exhibits that the double side band (DSB) conversion loss is below 8.3 dB over the range of 420-460GHz. The optimized conversion loss of the 440GHz mixer is 7.6 dB at 441GHz under the LO level of 5 mW at room temperature.
Keywords
III-V semiconductors; Schottky diode mixers; circuit optimisation; flip-chip devices; gallium arsenide; microwave mixers; quartz; DSB conversion loss; GaAs; double side band conversion loss; flip-chip; frequency 420 GHz to 460 GHz; loss 7.6 dB; planar Schottky diodes; power 5 mW; size 100 mum; subharmonic Schottky diode mixer; thick quartz substrate; Gallium arsenide; Integrated circuit modeling; Mixers; Radio frequency; Receivers; Schottky diodes; Substrates; 440GHz Mixer; Schottky Diode; quartz substrate;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
Type
conf
DOI
10.1109/EDSSC.2014.7061175
Filename
7061175
Link To Document