Title :
High PSRR low noise CMOS bandgap voltage reference
Author :
Dongjun Wang ; Ping Luo ; Pengfei Liao
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A high PSRR with low temperature coefficient and low noise CMOS bandgap voltage reference fabricated in 0.13-μm CMOS technology is presented in this brief. In the design, the cascade current mirror is used in the circuit, the output of the OP is used as the bias of itself and drives the next stage, and PTAT temperature compensation is realized. The simulation results, which are obtained by Hspice tools, show that in the - 40~125°C temperature range, the circuit is working properly from 1.61V to 4V with 13.3ppm/ °C. The PSRR is more than 72.2dB and noise is 38.4nV @100k.
Keywords :
CMOS integrated circuits; reference circuits; PTAT temperature compensation; high PSRR voltage reference; low noise CMOS bandgap voltage reference; size 0.13 nm; temperature -40 C to 125 C; voltage 1.61 V to 4 V; CMOS integrated circuits; CMOS technology; Electrodes; MOS devices; Noise; Presses; Bandgap reference; Cascade current mirror; PSRR; PTAT; Temperature compensate;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061176
