The research of heterogeneous integration based on epitaxial layer transfer technology

The present work describes the study and improvement of heterogeneous integration based on epitaxial layer transfer technique, which is used to separate III/V device structures from their substrate and transfer to the other substrate. Our work aims in the development of a new process for integration of GaAs devices with Si. It is based on low temperature bonding of the epitaxial layer transfer technology. Using this method, we demonstrate that GaAs PIN epitaxial layer on a 3 inch-diameter GaAs wafer is transferred to a silicon substrate. After the GaAs PIN epitaxial layer is transferred, the GaAs PIN devices on silicon are fabricated, besides the IV characteristic of GaAs PIN devices is unaffected by epitaxial layer transfer.