A novel method to fabricate the black silicon for the solar cell

In this paper, an one-step method to fabricate the black silicon with varying scale was introduced. This novel method was conducted at room temperature and completely compatible with the traditional process. This method was based on a standard Bosch deep reactive ions etching with a phase-delay producer. The relationship between the process parameter and the key physical factor was investigated and the practical reflectance of the black silicon was measured. The results showed the black silicon, produced by this method, had a very low reflectance and was easy to change the scale.