Title :
Fabrication of SiGe HBT integrated SOI CMOS
Author :
Jing Zhang ; Zhaohuan Tang
Author_Institution :
Nat. Lab. of Analog Integrated Circuits, Chongqing, China
Abstract :
In this paper, an approach of developing the SOI CMOS vertical heterojunction bipolar transistor (HBT) is presented. With a novel all-depletion collector structure, the compatibility of HBT with MOS device in structure and process can be realized on a very thin SOI film, thus providing a new solution to producing high-performance integrated circuits.
Keywords :
CMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; silicon-on-insulator; HBT; MOS device compatibility; SOI CMOS; SiGe; all-depletion collector structure; vertical heterojunction bipolar transistor; CMOS integrated circuits; CMOS technology; Heterojunction bipolar transistors; Performance evaluation; Silicon; CMOS; HBT; Integrate; SOI; SiGe;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061196
