DocumentCode
3578126
Title
Study on nucleation characteristic of phase change memory set operation using numerical simulation
Author
Peng Gong ; Yiqun Wei ; Xinnan Lin ; Xiaole Cui ; Zhitang Song ; Chan, Mansun
Author_Institution
Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China
fYear
2014
Firstpage
1
Lastpage
2
Abstract
A numerical model based on the finite element method for phase change memory including ovonic threshold switch and memory threshold switch is developed. The temperature distribution, phase fraction profiles in set operation and the programming resistance variation with currents are simulated respectively. By analyzing the programming properties of cells at different reset state, the impacts of the reset current to the programming characteristics are evaluated.
Keywords
finite element analysis; nucleation; phase change memories; temperature distribution; finite element method; memory threshold switch; nucleation characteristic; numerical model; ovonic threshold switch; phase change memory; phase fraction profiles; programming resistance variation; reset current; reset state; set operation; temperature distribution; Heating; Switches; nucleation characteristics; numerical simulation; phase change memory; set operation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
Type
conf
DOI
10.1109/EDSSC.2014.7061202
Filename
7061202
Link To Document