Title :
A Phase Change Memory SPICE model adaptable to different device geometry
Author :
Xian Zheng ; Yiqun Wei ; Xinnan Lin ; Yuefeng Gong ; Yan Liu ; Xiaole Cui ; Zhitang Song
Author_Institution :
Sch. of Electron. & Comput. Eng., Peking Univ., Shenzhen, China
Abstract :
A SPICE model of Phase Change Memory (PCM) is developed based on a proposed analytical resistance model, which enables the PCM circuit simulation adaptable to different device geometry for the first time. The model agrees with experimental data and results show it is able to predict device characteristics with different geometry.
Keywords :
SPICE; phase change memories; PCM circuit simulation; SPICE model; device geometry; phase change memory; Adaptation models; Current measurement; Informatics; SPICE model; phase-change memory;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061205
