Title :
Indium-zinc-oxide electric-double-layer thin-film transistors for artificial synapse applications
Author_Institution :
Ningbo Inst. of Mater. Technol. & Eng., Ningbo, China
Abstract :
Phosphorous-doped nanogranular SiO2 gated laterally coupled indium-zinc-oxide electric-double-layer synaptic transistors are self-assembled on glass substrate. A strong electric-double-layer effect is observed. Synaptic functions, such as excitatory postsynaptic currents (EPSC) and paired-pulse facilitation (PPF) are mimicked on the proposed IZO synaptic transistor. The time scales of the PPF behaviors are similar to that observed in biological synapse. The proposed synaptic transistors are meaningful for neuron bionics.
Keywords :
assembling; electrochemistry; indium compounds; liquid theory; self-assembly; thin film transistors; EPSC; InZnO; PPF; artificial synapse application; biological synapse; excitatory postsynaptic current; glass substrate; indium-zinc-oxide electric-double-layer thin film transistor; lateral coupling; neuron bionics; paired-pulse facilitation; phosphorous-doped nanogranular gating; self-assembling; Capacitors; Logic gates; Nanobioscience; Electric-Double-Layer; Laterally Coupling; Synaptic transistor;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061207
