Title :
Total dose dependence of hot carrier injection effect in the NMOS devices
Author :
He Yujuan ; Zhang XiaoWen
Author_Institution :
Sci. & Technol. on Reliability Phys. & Applic. of Electr. Component Lab., Guangzhou, China
Abstract :
The total dose dependence of hot carrier injection (HCI) effect in the 0.35μm NMOS Devices was studied in this paper. It was indicated that the threshold voltage shift of NMOS devices with HCI test after 100krad (Si) total dose radiation was more than the devices without radiation. It was related to irradiation annealing effect and hot electrons being trapped by irradiation interface traps.
Keywords :
MOSFET; annealing; hot carriers; radiation hardening (electronics); silicon; HCI effect; NMOS devices; Si; hot carrier injection effect; hot electrons; irradiation annealing effect; irradiation interface traps; radiation absorbed dose 100 krad; size 0.35 mum; threshold voltage shift; total dose dependence; total dose radiation; Annealing; Facsimile; MOS devices; MOSFET circuits; Silicon; HCI; Total dose; irradiation;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061213
