Title :
Single-implant, field plate and guard rings assist multi-zone graded JTE for 4H-SiC p-i-n diodes
Author :
Yang Ding ; Li Zhang ; Yan Wang ; Ruifeng Yue
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
A novel edge termination, referred to as single-implant, field plate (fp) and guard rings (gr) assist two-zone graded junction termination extension (fpgr-assist JTE), is presented for 4H-SiC p-i-n diodes to extend the JTE dose window. The new termination can extend and combine the split window of two-zone graded JTE just using the same fabrication process of conventional single-implant two-zone graded JTE. Optimum JTE dose window (>4000V) is significantly extended by a ratio of 76.9%.
Keywords :
p-i-n diodes; silicon compounds; 4H-p-i-n diodes; SiC; dose window; fabrication process; field plate; guard rings; multizone graded JTE; single-implant two-zone graded junction termination extension; split window; Cathodes; Junction termination extension (JTE); dose window; p-i-n diodes; silicon carbide (SiC);
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on
DOI :
10.1109/EDSSC.2014.7061214
