Improved performance of TiN/HfO2/Pt resistive switching device by modifying TiN top electrode crystal orientation

Author

Hou, Y. ; Liu, R. ; Zhang, W.B. ; Liu, L.F. ; Chen, B. ; Zhang, F.F. ; Han, D.D. ; Kang, J.F. ; Cheng, Y.H.

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2014

Firstpage

1

Lastpage

2

Abstract

TiN/HfO₂/Pt resistive switching (RS) devices were fabricated with TiN top electrodes deposited in various Ar:N₂ ambient. Strong relevance between ambient Ar:N₂ ratio and electrical performance was demonstrated. This correlation was attributed to the difference in TiN crystal orientation, which has strong dependence on and can be controlled by ambient Ar:N₂ ratio during deposition. Electrical measurement results suggest that (200) crystal orientation of TiN contributes to stronger oxygen reservoir ability, meanwhile the capability of (111) orientation is likely to be weaker. Modifying TiN top electrode oxygen storage ability by controllable crystal orientation helps realize stable and uniform resistive switching devices.

Keywords

argon; crystal orientation; electrodes; hafnium compounds; integrated circuit measurement; integrated circuit testing; nitrogen; oxygen; platinum; resistive RAM; sputter deposition; titanium compounds; Ar; N₂; RS devices; TiN-HfO₂-Pt; electrical measurement; oxygen reservoir ability; resistive switching device; top electrode crystal orientation; top electrode oxygen storage ability; Correlation; Crystals; Electrodes; Silicon; Switches; Tin; HfO2; RRAM; Resistive switching; Uniformity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Conference on

Type

conf

DOI

10.1109/EDSSC.2014.7061217

Filename

7061217